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NLAS5223B Folha de dados(PDF) 1 Page - ON Semiconductor |
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NLAS5223B Folha de dados(HTML) 1 Page - ON Semiconductor |
1 / 12 page © Semiconductor Components Industries, LLC, 2006 September, 2006 − Rev. 3 1 Publication Order Number: NLAS5223B/D NLAS5223B, NLAS5223BL Ultra−Low 0.5 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw (SPDT) switch featuring Ultra−Low RON of 0.5 W, at VCC = 3.0 V. The part also features guaranteed Break Before Make (BBM) switching, assuring the switches never short the driver. Features • Ultra−Low RON, t0.5 W at VCC = 3.0 V • NLAS5223B Interfaces with 2.8 V Chipset • NLAS5223BL Interfaces with 1.8 V Chipset • Single Supply Operation from 1.65−4.5 V • Full 0−VCC Signal Handling Capability • High Off−Channel Isolation • Low Standby Current, t50 nA • Low Distortion • RON Flatness of 0.15 W • High Continuous Current Capability $300 mA Through Each Switch • Large Current Clamping Diodes at Analog Inputs $300 mA Continuous Current Capability • Package: ♦ 1.4 x 1.8 x 0.75 mm WQFN−10 Pb−Free ♦ 1.4 x 1.8 x 0.55 mm UQFN−10 Pb−Free • These are Pb−Free Devices Applications • Cell Phone Audio Block • Speaker and Earphone Switching • Ring−Tone Chip / Amplifier Switching • Modems http://onsemi.com MARKING DIAGRAM XXM G G XX = Specific Device Code AD = NLAS5223BMNR2G AE = NLAS5223BLMNR2G AP = NLAS5223BMUR2G M = Date Code/Assembly Location G = Pb−Free Device WQFN−10 CASE 488AQ 1 (Note: Microdot may be in either location) 1 UQFN−10 CASE 488AT XXM G G VCC IN2 COM2 GND 8 9 10 12 NC1 NC2 NO1 76 5 4 3 NO2 IN1 COM1 FUNCTION TABLE 0 1 IN 1, 2 NO 1, 2 NC 1, 2 OFF ON ON OFF See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. ORDERING INFORMATION |
Nº de peça semelhante - NLAS5223B |
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Descrição semelhante - NLAS5223B |
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