BU2525DW datasheet(2/7 Pages) PHILIPS

Nome de Peças	BU2525DW

Descrição Electrónicos	Silicon Diffused Power Transistor

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Fabricante Electrônico	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2525DW

STATIC CHARACTERISTICS

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

CES

Collector cut-off current

2

V

BE = 0 V; VCE = VCESMmax

-

1.0

mA

I

CES

V

BE = 0 V; VCE = VCESMmax;

-

2.0

mA

T

j = 125 ˚C

I

EBO

Emitter cut-off current

V

EB = 6.0 V; IC = 0 A

72

110

218

mA

R

EB

Base-emitter resistance

V

EB = 6.0 V

-

55

-

Ω

BV

EBO

Emitter-base breakdown voltage

I

B = 600 mA

7.5

13.5

-

V

CEOsust

Collector emitter-sustaining voltage

I

B = 0A;IC = 100mA;

800

-

V

L= 25 mH

V

CEsat

Collector-emitter saturation voltage

I

C = 8.0 A; IB = 1.6 A

-

5.0

V

BEsat

Base-emitter saturation voltage

I

C = 8.0 A; IB = 1.6 A

-

1.1

V

h

FE

DC current gain

I

C = 1 A; VCE = 5 V

-

11

-

h

FE

I

C = 8 A; VCE = 5 V

5

7

9.5

V

F

Diode forward voltage

I

F = 8 A

1.6

2.0

V

DYNAMIC CHARACTERISTICS

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

C

c

Collector capacitance

I

E = 0 A; VCB = 10 V; f = 1 MHz

145

-

pF

Switching times (32 kHz line

I

Csat = 8.0 A; LC = 260 µH; Cfb = 13 nF;

deflection circuit)

I

B(end) = 1.1 A; LB = 2.5 µH; -VBB = 4 V;

(-dI

B/dt = 1.6 A/µs)

t

s

Turn-off storage time

3.0

4.0

µs

t

f

Turn-off fall time

0.2

0.35

µs

V

fr

Anti-parallel diode forward recovery

I

F = 8 A; dIF/dt = 50 A/µs16

V

voltage

t

fr

Anti-parallel diode forward recovery

V

F = 5 V

410

ns

time

Fig.1. Switching times waveforms.

Fig.2. Switching times definitions.

IC

IB

VCE

I

IBend

32us

13us

10us

t

TRANSISTOR

DIODE

Csat

ICsat

90 %

10 %

tf

ts

IBend

IC

IB

t

- IBM

2 Measured with half sine-wave voltage (curve tracer).

September 1997

2

Rev 1.100

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