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BU2527AF Folha de dados(PDF) 5 Page - NXP Semiconductors |
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BU2527AF Folha de dados(HTML) 5 Page - NXP Semiconductors |
5 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AF Fig.13. Normalised power dissipation. PD% = 100 ⋅P D/PD 25˚C = f (Ths) Fig.14. Transient thermal impedance. Z th j-hs = f(t); parameter D = tp/T Fig.15. Forward bias safe operating area. T hs = 25 ˚C I CDC & ICM = f(VCE); ICM single pulse; parameter tp Second-breakdown limits independant of temperature. Mounted with heatsink compound. Fig.16. Reverse bias safe operating area. T j ≤ Tjmax 0 20 40 60 80 100 120 140 Ths / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 with heatsink compound BU2525AF IC / A 100 10 1 0.1 0.01 1 10 100 1000 VCE / V 100 us 1 ms 10 ms DC 40 us tp = Ptot ICM ICDC = 0.01 1E-06 1E-04 1E-02 1E+00 t / s Zth / (K/W) BU2525AF 10 1 0.1 0.01 0.001 D = tp tp T T P t D D = 0 0.02 0.05 0.1 0.2 0.5 0 30 20 10 0 500 1000 1500 VCE / V IC / A BU2527AF September 1997 5 Rev 1.200 |
Nº de peça semelhante - BU2527AF |
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Descrição semelhante - BU2527AF |
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