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BU2720DX Folha de dados(PDF) 4 Page - NXP Semiconductors |
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BU2720DX Folha de dados(HTML) 4 Page - NXP Semiconductors |
4 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DX Fig.5. DC current gain. h FE = f (IC) Parameter T hs (Low and high gain) Fig.6. Typical collector-emitter saturation voltage. V CEsat = f (IC); parameter IC/IB Fig.7. Typical base-emitter saturation voltage. V BEsat = f (IB); parameter IC Fig.8. Limit P tot; T hs = 85˚C P tot = f (IB(end)); IC = 4.5 A; f = 16 kHz Fig.9. Limit P tot; T hs = 85˚C P tot = f (IB(end)); IC = 5.5 A; f = 16 kHz Fig.10. Limit storage and fall time. t s = f (IB); tf = f (IB); parameter IC; Ths = 85˚C; f = 16 kHz BU2720/22DF 0.01 0.1 1 10 100 1 10 100 Ths = 25 C Ths = 85 C VCE = 1 V hFE IC / A BU2720DF 0 0.5 1 1.5 2 1 10 100 PTOT / W IB / A IC = 4.5 A f = 16 kHz Ths = 85 C BU2720DF 0.01 0.1 1 10 0.1 1 10 100 Ths = 85 C Ths = 25 C IC/IB = 8 IC/IB = 4 VCEsat / V IC / A BU2720DF 1 10 100 PTOT / W IB / A IC = 5.5 A f = 16 kHz Ths = 85 C 0.5 1 1.5 2 2.5 0 0.5 1 1.5 2 0.6 0.7 0.8 0.9 1 Ths = 25 C Ths = 85 C IC = 5.5 A 4.5 A VBEsat / V BU2720DF IB / A 0.5 1 1.5 2 2.5 0 2 4 6 8 10 12 ts/tf / us BU2720AF IC = 5.5 A IC = 4.5 A IB / A September 1997 4 Rev 1.300 |
Nº de peça semelhante - BU2720DX |
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Descrição semelhante - BU2720DX |
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