MJ15016 datasheet(1/6 Pages) ONSEMI

Nome de Peças	MJ15016

Descrição Electrónicos	Complementary Silicon High-Power Transistors

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Fabricante Electrônico	ONSEMI [ON Semiconductor]

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April, 2006 − Rev. 6

1

Publication Order Number:

2N3055A/D

2N3055A (NPN),

MJ15015 (NPN),

MJ15016 (PNP)

MJ15015 and MJ15016 are Preferred Devices

Complementary Silicon

High−Power Transistors

These PowerBase

t complementary transistors are designed for

high power audio, stepping motor and other linear applications. These

devices can also be used in power switching circuits such as relay or

solenoid drivers, dc−to−dc converters, inverters, or for inductive loads

requiring higher safe operating area than the 2N3055.

Features

• Current−Gain − Bandwidth−Product @ IC = 1.0 Adc

fT = 0.8 MHz (Min) − NPN

= 2.2 MHz (Min) − PNP

• Safe Operating Area − Rated to 60 V and 120 V, Respectively

• Pb−Free Packages are Available*

MAXIMUM RATINGS (Note 1)

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

2N3055A

MJ15015, MJ15016

VCEO

60

120

Vdc

Collector−Base Voltage

2N3055A

MJ15015, MJ15016

VCBO

100

200

Vdc

Collector−Emitter Voltage Base

Reversed Biased

2N3055A

MJ15015, MJ15016

VCEV

100

200

Vdc

Emitter−Base Voltage

VEBO

7.0

Vdc

Collector Current − Continuous

IC

15

Adc

Base Current

IB

7.0

Adc

Total Device Dissipation @ TC = 25_C

Derate above 25

_C

2N3055A

Total Device Dissipation @ TC = 25_C

Derate above 25

_C

MJ15015, MJ15016

PD

115

0.65

180

1.03

W

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

−65 to +200

_C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

1.52

0.98

_C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC Registered Data. (2N3055A)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

15 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60, 120 VOLTS − 115, 180 WATTS

http://onsemi.com

MARKING DIAGRAMS

2N3055AG

AYWW

MEX

TO−204AA (TO−3)

CASE 1−07

STYLE 1

2N3055A = Device Code

MJ1501x = Device Code

x = 5 or 6

G

= Pb−Free Package

A

= Assembly Location

Y

= Year

WW

= Work Week

MEX

= Country of Origin

Preferred devices are recommended choices for future use

and best overall value.

MJ1501xG

AYWW

MEX

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

Nº de peça semelhante - MJ15016

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Mospec Semiconductor	MJ15016	193Kb / 4P	POWER TRANSISTORS(15A)
Motorola, Inc	MJ15016	235Kb / 6P	15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS
ON Semiconductor	MJ15016	235Kb / 6P	COMPLEMENTARY SILICON POWER TRANSISTORS 1995 REV 1
Wing Shing Computer Com...	MJ15016	47Kb / 1P	PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
Boca Semiconductor Corp...	MJ15016	200Kb / 4P	COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

More results

Descrição semelhante - MJ15016

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	TIP35C	47Kb / 4P	COMPLEMENTARY SILICON HIGH POWER TRANSISTORS
New Jersey Semi-Conduct...	2N3055A	309Kb / 3P	COMPLEMENTARY SILICON HIGH - POWER TRANSISTORS
STMicroelectronics	TIP35CW	104Kb / 7P	Complementary Silicon High Power Transistors
STMicroelectronics	TIP36C	46Kb / 4P	COMPLEMENTARY SILICON HIGH POWER TRANSISTORS
Boca Semiconductor Corp...	2N3055A	200Kb / 4P	COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS
Boca Semiconductor Corp...	2N5883	190Kb / 4P	COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS
STMicroelectronics	2N5884	68Kb / 4P	COMPLEMENTARY SILICON HIGH POWER TRANSISTORS June 1997
Boca Semiconductor Corp...	2N5879	186Kb / 4P	COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS
ON Semiconductor	2N3055AG	143Kb / 6P	Complementary Silicon High-Power Transistors September, 2013 ??Rev. 7
ON Semiconductor	TIP35A	137Kb / 8P	Complementary Silicon High-Power Transistors May, 2012 ??Rev. 6

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