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MJE802 Folha de dados(PDF) 2 Page - STMicroelectronics |
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MJE802 Folha de dados(HTML) 2 Page - STMicroelectronics |
2 / 4 page THERMAL DATA Rthj-amb Thermal Resistance Junction-ambient Max 3.13 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = rated VCBO VCB = rated VCBO Tcase = 100 oC 100 500 µA µA ICEO Collector Cut-off Current (IB = 0) VCE = rated VCEO 100 µA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 2mA VCEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 50 mA 80 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 4 A IB = 40 mA IC = 1.5 A IB = 30 mA 3 2.5 V V VBE ∗ Base-Emitter Voltage IC = 4 A VCE = 3 V IC = 1.5 A VCE = 3 V 3 2.5 V V hFE ∗ DC Current Gain IC = 4 A VCE = 3 V IC = 1.5 A VCE = 3 V 100 750 hfe Small Signal Current Gain IC = 1.5 A VCE = 3 V f = 1 MHz 1 * Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5% Safe Operating Area MJE802 2/4 |
Nº de peça semelhante - MJE802 |
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Descrição semelhante - MJE802 |
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