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BC338-25 Folha de dados(PDF) 1 Page - ON Semiconductor

Nome de Peças BC338-25
Descrição Electrónicos  Amplifier Transistors NPN Silicon
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© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 5
1
Publication Order Number:
BC337/D
BC337, BC337−16,
BC337−25, BC337−40,
BC338−25
Amplifier Transistors
NPN Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
BC337
BC338
Unit
Collector − Emitter Voltage
VCEO
45
25
Vdc
Collector − Base Voltage
VCBO
50
30
Vdc
Emitter − Base Voltage
VEBO
5.0
Vdc
Collector Current − Continuous
IC
800
mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation
@ TC = 25°C
Derate above 25
°C
PD
1.5
12
W
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance,
Junction−to−Case
RqJC
83.3
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
COLLECTOR
1
2
BASE
3
EMITTER
MARKING
DIAGRAM
BC33
x−xx
AYWW
G
G
BC33x−xx = Device Code
(Refer to page 4)
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
3
2
1
TO−92
CASE 29
STYLE 17


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