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J110RLRAG Folha de dados(PDF) 2 Page - ON Semiconductor

Nome de Peças J110RLRAG
Descrição Electrónicos  JFET ??General Purpose N?묬hannel ??Depletion
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Fabricante Electrônico  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

J110RLRAG Folha de dados(HTML) 2 Page - ON Semiconductor

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J110
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
STATIC CHARACTERISTICS
Gate −Source Breakdown Voltage
(IG = −1.0 mAdc)
V(BR)GSS
−25
Vdc
Gate Reverse Current
(VGS = −15 Vdc, VDS = 0)
(VGS = −15 Vdc, VDS = 0, TA = 100°C)
IGSS
−3.0
−200
nAdc
Gate−Source Cutoff Voltage
(VDS = 5.0 Vdc, ID = 1.0 mAdc)
VGS(off)
−0.5
−4.0
Vdc
Drain Source On−Resistance
(VDS v 0.1 V, VGS = 0 V)
RDS(on)
18
W
Zero−Gate−Voltage Drain Current (Note 1)
(VDS = 15 Vdc)
IDSS
10
mAdc
DYNAMIC CHARACTERISTICS
Drain−Gate and Source−Gate On−Capacitance
(VDS = VGS = 0, f = 1.0 MHz)
Cdg(on)
+
Csg(on)
85
pF
Drain−Gate Off−Capacitance
(VGS = −10 Vdc, f = 1.0 MHz)
Cdg(off)
15
pF
Source−Gate Off−Capacitance
(VGS = −10 Vdc, f = 1.0 MHz)
Csg(off)
15
pF
1. Pulse Width = 300
ms, Duty Cycle = 3.0%.
0
−20
40
−4
VGS, GATE−SOURCE VOLTAGE (VOLTS)
0
VGS, GATE−SOURCE VOLTAGE (VOLTS)
Figure 1. Common Source Input Capacitance
versus Gate−Source Voltage
Figure 2. Common Source Reverse Feedback
Capacitance versus Gate−Source Voltage
100
0
−20
−8
20
VDS = 0 V
60
VDS = 0 V
0
100
40
−12
−12
−16
−4
−8
−16
80
80
20
60
5 V
10 V
5 V
10 V
0−8
8
−2
−1
VGS(off), GATE−SOURCE CUTOFF VOLTAGE (VOLTS)
0
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus Gate−Source
Cutoff Voltage
Figure 4. Output Characteristic
VGS(off) = −2.0 V
28
20
−3
4
12
VGS = 0 V
16
0
100
40
12
−4
−5
−6
−7
4
6
10
14
16
18
80
20
60
VGS(off): VDS = 5 V
VGS(off): ID = 1.0 mA
RDS(on): VDS ≤ 0.1 V
RDS(on): VGS = 0 V
0
90
30
70
10
50
−0.25 V
−0.5 V
−0.75 V
−1.25 V
−1 V


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