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MC10E451FNR2G Folha de dados(PDF) 6 Page - ON Semiconductor

Nome de Peças MC10E451FNR2G
Descrição Electrónicos  5V ECL 6?묪it D Register Differential Data and Clock
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Fabricante Electrônico  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC10E451FNR2G Folha de dados(HTML) 6 Page - ON Semiconductor

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MC10E451, MC100E451
http://onsemi.com
6
Table 7. AC CHARACTERISTICS VCCx = 5.0 V; VEE = 0.0 V or VCCx = 0.0 V; VEE = −5.0 V (Note 13)
0°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
fMAX
Maximum Toggle Frequency
1.1
1.1
1.1
GHz
tPLH
tPHL
Propagation Delay to Output
CLK (Differential), CLK (Single−Ended), MR
625
1050
625
1050
625
1050
ps
ts
Setup Time
D
150
−100
150
−100
150
−100
ps
th
Hold Time
D
250
100
250
100
250
100
ps
tRR
Reset Recovery Time
750
600
750
600
750
600
ps
tPW
Minimum Pulse Width
ps
CLK, MR
400
400
400
tSKEW
Within−Device Skew (Note 14)
100
100
100
ps
tJITTER
Random Clock Jitter (RMS)
<1.0
<1.0
<1.0
ps
VPP
Input Voltage Swing (Differential Configuration)
150
1000
150
1000
150
1000
mV
tr
tf
Rise/Fall Times
ps
(20 − 80%)
275
450
800
275
450
800
275
450
800
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification
limit values are applied individually under normal operating conditions and not valid simultaneously.
13.10 Series: VEE can vary −0.46 V / +0.06 V.
100 Series: VEE can vary −0.46 V / +0.8 V.
14.Within−device skew is defined as identical transitions on similar paths through a device.


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