MJW21192 datasheet(1/6 Pages) ONSEMI

Nome de Peças	MJW21192

Descrição Electrónicos	8.0 A POWER TRANSISTORS COMPLEMENTARY SILICON 150 V, 125 W

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Fabricante Electrônico	ONSEMI [ON Semiconductor]

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June, 2005 − Rev. 2

1

Publication Order Number:

MJW21192/D

MJW21192 (NPN),

MJW21191 (PNP)

Complementary Silicon

Plastic Power Transistors

Specifically designed for power audio output, or high power drivers

in audio amplifiers.

• DC Current Gain Specified up to 8.0 A at Temperature

• All On Characteristics at Temperature

• High SOA: 20 A, 18 V, 100 ms

• TO−247AE Package

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

MJW21191

MJW21192

Unit

Collector−Emitter Voltage

VCEO

150

Vdc

Collector−Base Voltage

VCB

150

Vdc

Emitter−Base Voltage

VEB

5.0

Vdc

Collector Current − Continuous

− Peak

IC

8.0

16

Adc

Base Current

IB

2.0

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25

_C

PD

125

0.65

W

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to

+ 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

RqJC

1.0

_C/W

Thermal Resistance, Junction to Ambient

RqJA

50

_C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1.0

Figure 1. Typical Capacitance @ 25

°C

VR, REVERSE VOLTAGE (V)

1.0

10

100

1000

100

1000

10

NPN

PNP

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device

Package

Shipping

ORDERING INFORMATION

MJW21191

TO−247

30 Units/Rail

MARKING DIAGRAM

8.0 A

POWER TRANSISTORS

COMPLEMENTARY SILICON

150 V, 125 W

x

= 1 or 2

A

= Assembly Location

Y

= Year

WW = Work Week

G

= Pb−Free Package

MJW21191G

TO−247

(Pb−Free)

30 Units/Rail

MJW21192

TO−247

30 Units/Rail

MJW21192G

TO−247

(Pb−Free)

30 Units/Rail

http://onsemi.com

TO−247

CASE 340L

STYLE 3

1 2 3

MJW2119x

AYWWG

1 BASE

2 COLLECTOR

3 EMITTER

Nº de peça semelhante - MJW21192

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Motorola, Inc	MJW21192	150Kb / 8P	8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 150 VOLTS 100 WATTS
ON Semiconductor	MJW21192	150Kb / 8P	POWER TRANSISTORS COMPLEMENTARY SILICON
Savantic, Inc.	MJW21192	117Kb / 3P	Silicon NPN Power Transistors
Inchange Semiconductor ...	MJW21192	242Kb / 2P	isc Silicon NPN Power Transistor
Savantic, Inc.	MJW21192	119Kb / 3P	Silicon NPN Power Transistors

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Descrição semelhante - MJW21192

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Motorola, Inc	MJW21192	150Kb / 8P	8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 150 VOLTS 100 WATTS
ON Semiconductor	MJW21193	74Kb / 8P	16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W July, 2005 ??Rev. 2
	MJL21195	164Kb / 8P	16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W June, 2005 ??Rev. 3
	2N3773	125Kb / 5P	NPN Power Transistors 16 A NPN POWER TRANSISTORS 140 V, 150 W April, 2013 ??Rev. 11
	MJF122	155Kb / 7P	COMPLEMENTARY SILICON POWER DARLINGTONS 5.0 A, 100 V, 30 W April, 2006 ??Rev. 5
Motorola, Inc	MJE15032	141Kb / 6P	8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS 50 WATTS
ON Semiconductor	MJE15032	75Kb / 6P	8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS June, 2005 ??Rev. 3
ON Semiconductor	MJH11017	86Kb / 6P	15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150??50 VOLTS, 150 WATTS July, 2006 ??Rev. 6
Motorola, Inc	D44E	84Kb / 2P	COMPLEMENTARY SILICON POWER TRANSISTORS
STMicroelectronics	MJE172	52Kb / 4P	COMPLEMENTARY SILICON POWER TRANSISTORS

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