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MMBT6521LT1 Folha de dados(PDF) 6 Page - ON Semiconductor

Nome de Peças MMBT6521LT1
Descrição Electrónicos  Amplifier Transistor NPN Silicon
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Fabricante Electrônico  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMBT6521LT1 Folha de dados(HTML) 6 Page - ON Semiconductor

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6
Figure 20. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100 200
500 1.0k 2.0k
5.0k 10k 20k 50k 100k
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN−569)
ZqJA(t) = r(t) w RqJA
TJ(pk) − TA = P(pk) ZqJA(t)
t1
t2
P(pk)
FIGURE 21
Figure 21.
TJ, JUNCTION TEMPERATURE (°C)
104
−4
0
Figure 22.
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
400
2.0
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by
the model as shown in Figure 21. Using the model and the de-
vice thermal response the normalized effective transient ther-
mal resistance of Figure 20 was calculated for various duty
cycles.
To find ZqJA(t), multiply the value obtained from Figure 20
by the steady state value RqJA.
Example:
The MPS6521 is dissipating 2.0 watts peak under the follow-
ing conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
Using Figure 20 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see ON Semiconductor Application
Note AN569/D, available from the Literature Distribution
Center or on our website at www.onsemi.com.
The safe operating area curves indicate IC−VCE limits of
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 22 is based upon TJ(pk) = 150
°C; TC or
TA is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided TJ(pk)
≤ 150°C. TJ(pk)
may be calculated from the data in Figure 20. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
10−2
10−1
100
101
102
103
−2
0
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
VCC = 30 Vdc
ICEO
ICBO
AND
ICEX @ VBE(off) = 3.0 Vdc
TA = 25°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms
10 ms
TC = 25°C
1.0 s
dc
dc
4.0
6.0
10
20
40
60
100
200
4.0
6.0
8.0 10
20
40
TJ = 150°C
100 ms


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