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2SD965L-S-AB3-R Folha de dados(PDF) 3 Page - Unisonic Technologies |
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2SD965L-S-AB3-R Folha de dados(HTML) 3 Page - Unisonic Technologies |
3 / 4 page 2SD965/A NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R209-007,B TYPICAL CHARACTERISTICS Static Characteristics Collector-Emitter Voltage ( V) 0 0.4 0.8 1.2 1.6 2.0 0 1.0 1.5 2.0 2.5 3.0 DC Current Gain Collector Current, IC (mA) VCE=2V 10 0 10 1 10 2 10 3 10 -1 10 1 10 2 10 3 10 4 IB=3.0mA IB=2.5mA IB=2.0mA IB=1.0mA IB=1.5mA IB=0.5mA Base-Emitter on Voltage Collector Current, IC (mA) Saturation Voltage IC=30·IB Ta=75℃ -25℃ 25℃ VCE=2V 0 1 2 3 4 5 6 00.8 1.2 1.6 2.0 Base to Emitter Voltage, VBE (V) 0.4 10 1 10 2 10 3 10 4 10 0 10 1 10 2 10 3 10 4 VBE(SAT) VCE(SAT) Current Gain-Bandwidth Product Collector Output Capacitance Collector Current, IC (mA) VCE=6V Collector-Base Voltage (V) 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 f=1MHz IE=0 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 |
Nº de peça semelhante - 2SD965L-S-AB3-R |
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Descrição semelhante - 2SD965L-S-AB3-R |
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