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MC74VHCT139ADTG Folha de dados(PDF) 3 Page - ON Semiconductor

Nome de Peças MC74VHCT139ADTG
Descrição Electrónicos  Dual 2?뭪o?? Decoder/ Demultiplexer
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Fabricante Electrônico  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC74VHCT139ADTG Folha de dados(HTML) 3 Page - ON Semiconductor

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MC74VHCT139A
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3
MAXIMUM RATINGS (Note 1)
Symbol
Parameter
Value
Unit
VCC
Positive DC Supply Voltage
−0.5 to +7.0
V
VIN
Digital Input Voltage
−0.5 to +7.0
V
VOUT
DC Output Voltage
Output in 3−State
High or Low State
−0.5 to +7.0
−0.5 to VCC +0.5
V
IIK
Input Diode Current
−20
mA
IOK
Output Diode Current
$20
mA
IOUT
DC Output Current, per Pin
$25
mA
ICC
DC Supply Current, VCC and GND Pins
$75
mA
PD
Power Dissipation in Still Air
SOIC Package
TSSOP
200
180
mW
TSTG
Storage Temperature Range
−65 to +150
°C
VESD
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
>2000
>200
>2000
V
ILATCHUP
Latchup Performance
Above VCC and Below GND at 125°C (Note 5)
$300
mA
qJA
Thermal Resistance, Junction−to−Ambient
SOIC Package
TSSOP
143
164
°C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the
Recommended Operating Conditions.
2. Tested to EIA/JESD22−A114−A
3. Tested to EIA/JESD22−A115−A
4. Tested to JESD22−C101−A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
Max
Unit
VCC
DC Supply Voltage
4.5
5.5
V
VIN
DC Input Voltage
0
5.5
V
VOUT
DC Output Voltage Output in 3−State
High or Low State
0
0
5.5
VCC
V
TA
Operating Temperature Range, all Package Types
−55
125
°C
tr, tf
Input Rise or Fall Time
VCC = 5.0 V + 0.5 V
0
20
ns/V
DEVICE JUNCTION TEMPERATURE VERSUS TIME
TO 0.1% BOND FAILURES
Junction
Temperature
°C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
1
10
100
1000
TIME, YEARS
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 6. Failure Rate vs. Time Junction Temperature


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