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BYX103G Folha de dados(PDF) 2 Page - NXP Semiconductors

Nome de Peças BYX103G
Descrição Electrónicos  High-voltage soft-recovery controlled avalanche rectifiers
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYX103G Folha de dados(HTML) 2 Page - NXP Semiconductors

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2000 Jan 13
2
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifiers
BYX101G; BYX102G;
BYX103G; BYX104G
FEATURES
• Glass passivated
• High maximum operating temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy absorption capability
• Recovery times ranging from 600 to 50 ns
• Soft-recovery switching characteristics
• Compact construction.
APPLICATIONS
• High-voltage power supply units in, for example, X-ray
or radar systems.
DESCRIPTION
Rugged glass package, using a high temperature alloyed
construction.
This package is hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.
The package is designed to be used in an insulating
medium such as resin, oil or SF6 gas.
MARKING
TYPE NUMBER
CATHODE BAND
BYX101G
black
BYX102G
red
BYX103G
green
BYX104G
violet
handbook, halfpage
MSB026
a
k
Fig.1 Simplified outline (SOD88A) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
10
kV
VRW
working reverse voltage
9kV
IF(AV)
average forward current
averaged over any 20 ms period;
Toil =25 °C
BYX101G
400
mA
BYX102G
360
mA
BYX103G
310
mA
BYX104G
225
mA
average forward current
averaged over any 20 ms period;
Toil =70 °C
BYX101G
285
mA
BYX102G
255
mA
BYX103G
220
mA
BYX104G
160
mA
IFSM
non-repetitive peak forward current
t = 10 ms; half sinewave;
Tj =45 °C prior to surge
BYX101G
20
A
BYX102G
15
A
BYX103G
14
A
BYX104G
14
A


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