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BYX103G Folha de dados(PDF) 3 Page - NXP Semiconductors |
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BYX103G Folha de dados(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 2000 Jan 13 3 Philips Semiconductors Product specification High-voltage soft-recovery controlled avalanche rectifiers BYX101G; BYX102G; BYX103G; BYX104G ELECTRICAL CHARACTERISTICS Tj =25 °C; unless otherwise specified. THERMAL CHARACTERISTICS Note 1. For more information please refer to the “General Part of associated Handbook”. PRSM non-repetitive peak reverse power dissipation t=10 µs; triangular pulse; Tj =Tj max prior to surge − 4kW Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 1 A; Tj = 165 °C BYX101G 17.5 V BYX102G 19.5 V BYX103G 22.5 V BYX104G 31 V forward voltage IF =1A BYX101G 20.5 V BYX102G 23.9 V BYX103G 29.7 V BYX104G 52 V IR reverse current VR =VRWmax 15 µA VR =VRWmax; Tj = 165 °C50 µA trr reverse recovery time when switched from IF = 50 mA to IR = 100 mA; measured at IR =25mA BYX101G 600 ns BYX102G 350 ns BYX103G 175 ns BYX104G 50 ns SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-oil thermal resistance from junction to oil note 1 20 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT |
Nº de peça semelhante - BYX103G |
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Descrição semelhante - BYX103G |
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