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BYX104G Folha de dados(PDF) 2 Page - NXP Semiconductors |
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BYX104G Folha de dados(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 2000 Jan 13 2 Philips Semiconductors Product specification High-voltage soft-recovery controlled avalanche rectifiers BYX101G; BYX102G; BYX103G; BYX104G FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Recovery times ranging from 600 to 50 ns • Soft-recovery switching characteristics • Compact construction. APPLICATIONS • High-voltage power supply units in, for example, X-ray or radar systems. DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. MARKING TYPE NUMBER CATHODE BAND BYX101G black BYX102G red BYX103G green BYX104G violet handbook, halfpage MSB026 a k Fig.1 Simplified outline (SOD88A) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 10 kV VRW working reverse voltage − 9kV IF(AV) average forward current averaged over any 20 ms period; Toil =25 °C BYX101G − 400 mA BYX102G − 360 mA BYX103G − 310 mA BYX104G − 225 mA average forward current averaged over any 20 ms period; Toil =70 °C BYX101G − 285 mA BYX102G − 255 mA BYX103G − 220 mA BYX104G − 160 mA IFSM non-repetitive peak forward current t = 10 ms; half sinewave; Tj =45 °C prior to surge BYX101G − 20 A BYX102G − 15 A BYX103G − 14 A BYX104G − 14 A |
Nº de peça semelhante - BYX104G |
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Descrição semelhante - BYX104G |
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