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BYX120G Folha de dados(PDF) 2 Page - NXP Semiconductors

Nome de Peças BYX120G
Descrição Electrónicos  High-voltage soft-recovery controlled avalanche rectifier
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYX120G Folha de dados(HTML) 2 Page - NXP Semiconductors

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1996 Sep 26
2
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifier
BYX120G
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability.
APPLICATIONS
• Car ignition systems
• Automotive applications with
extreme temperature
requirements.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
The package is designed to be used
in an insulating medium such as
resin, oil or SF6 gas.
Fig.1 Simplified outline (SOD88A) and symbol.
handbook, halfpage
MSB026
a
k
The cathode is marked by an orange band on the body.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
VRRM
repetitive peak reverse voltage
3kV
VRWM
crest working reverse voltage
3kV
IF(AV)
average forward current
100
mA
IFRM
repetitive peak forward current
5A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave; Tj =Tj max
prior to surge; VR =VRWMmax
15
A
PRSM
non-repetitive peak reverse power
dissipation
t=10
µs; triangular pulse;
Tj =Tj max prior to surge
3kW
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
continuous
−65
+180
°C
maximum 30 mins
−65
+200
°C


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