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BYX120G Folha de dados(PDF) 3 Page - NXP Semiconductors |
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BYX120G Folha de dados(HTML) 3 Page - NXP Semiconductors |
3 / 4 page 1996 Sep 26 3 Philips Semiconductors Product specification High-voltage soft-recovery controlled avalanche rectifier BYX120G ELECTRICAL CHARACTERISTICS Tj =25 °C; unless otherwise specified. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 250 mA −− 5V V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA 3.5 −− kV IR reverse current VR =VRWMmax; Tj = 180 °C −− 75 µA SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient Tamb =Tleads 55 K/W |
Nº de peça semelhante - BYX120G |
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Descrição semelhante - BYX120G |
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