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BYX132G Folha de dados(PDF) 2 Page - NXP Semiconductors |
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BYX132G Folha de dados(HTML) 2 Page - NXP Semiconductors |
2 / 4 page 2000 Feb 29 2 Philips Semiconductors Product specification High-voltage car ignition diode BYX132G FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability. APPLICATIONS • Car ignition systems • Automotive applications with extreme temperature requirements. DESCRIPTION Rugged glass package, using a high temperature alloyed construction. The SOD61AB2 is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. The BYX132G is marked with a red cathode band on the body. handbook, halfpage ka MBK909 Fig.1 Simplified outline (SOD61AB2) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). CHARACTERISTICS Tj =25 °C unless otherwise specified. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 2kV VRWM crest working reverse voltage − 2kV IF(AV) average forward current − 50 mA IRSM non-repetitive peak reverse current t = 100 µs triangular pulse; Tj max prior to surge − 50 mA Tstg storage temperature −65 +200 °C Tj junction temperature continuous − 175 °C Tj junction temperature max. 30 min. − 200 °C SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage IF = 10 mA 2.5 3.5 V V(BR)R reverse avalanche breakdown voltage IR = 100 µA 2.6 3.7 kV IR reverse current VR =VRWMmax; Tj = 175 °C − 30 µA SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient Tamb =Tleads; lead length = 10 mm 90 K/W |
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Descrição semelhante - BYX132G |
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