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BYX133GPL Folha de dados(PDF) 2 Page - NXP Semiconductors

Nome de Peças BYX133GPL
Descrição Electrónicos  High-voltage car ignition diode
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYX133GPL Folha de dados(HTML) 2 Page - NXP Semiconductors

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2001 Oct 02
2
Philips Semiconductors
Product specification
High-voltage car ignition diode
BYX133GPL
FEATURES
• Plastic package
• Glass passivated
• High maximum operating temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy absorption capability.
APPLICATIONS
• Car ignition systems
• Automotive applications with extreme temperature
requirements.
DESCRIPTION
Plastic package, using glass passivation and a high
temperature alloyed construction.
This package is hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.
The package is designed to be used in an insulating
medium such as resin, oil or SF6 gas.
k
a
MBL155
Fig.1 Simplified outline (SOD125A) and symbol.
Cathode indicated by a brown band.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
3kV
VRWM
crest working reverse voltage
3kV
IF(AV)
average forward current
50
mA
IFRM
repetitive peak forward current
500
mA
IRSM
non-repetitive peak reverse current
t = 100
µs triangular pulse;
Tj(max) prior to surge
50
mA
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
continuous
175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VF
forward voltage
IF = 10 mA
3.75
5.25
V
V(BR)R
reverse avalanche breakdown voltage
IR = 100 µA
3.5
5.5
kV
IR
reverse current
VR =VRWMmax; Tj = 175 °C
30
µA
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient Tamb =Tleads; lead length = 10 mm
90
K/W


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