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BYX133GPL Folha de dados(PDF) 2 Page - NXP Semiconductors |
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BYX133GPL Folha de dados(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 2001 Oct 02 2 Philips Semiconductors Product specification High-voltage car ignition diode BYX133GPL FEATURES • Plastic package • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability. APPLICATIONS • Car ignition systems • Automotive applications with extreme temperature requirements. DESCRIPTION Plastic package, using glass passivation and a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. k a MBL155 Fig.1 Simplified outline (SOD125A) and symbol. Cathode indicated by a brown band. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). CHARACTERISTICS Tj =25 °C unless otherwise specified. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 3kV VRWM crest working reverse voltage − 3kV IF(AV) average forward current − 50 mA IFRM repetitive peak forward current − 500 mA IRSM non-repetitive peak reverse current t = 100 µs triangular pulse; Tj(max) prior to surge − 50 mA Tstg storage temperature −65 +175 °C Tj junction temperature continuous − 175 °C SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage IF = 10 mA 3.75 5.25 V V(BR)R reverse avalanche breakdown voltage IR = 100 µA 3.5 5.5 kV IR reverse current VR =VRWMmax; Tj = 175 °C − 30 µA SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient Tamb =Tleads; lead length = 10 mm 90 K/W |
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