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BYX134GP Folha de dados(PDF) 2 Page - NXP Semiconductors

Nome de Peças BYX134GP
Descrição Electrónicos  High-voltage car ignition diodes
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYX134GP Folha de dados(HTML) 2 Page - NXP Semiconductors

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1998 Dec 04
2
Philips Semiconductors
Product specification
High-voltage car ignition diodes
BYX134GP
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability.
APPLICATIONS
• Car ignition systems
• Automotive applications with
extreme temperature
requirements.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
The SOD107A is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
The package is designed to be used
in an insulating medium such as
resin, oil or SF6 gas.
Fig.1 Simplified outline (SOD107A) and symbol.
handbook, halfpage


ka
MAM404
Cathode indicated by light blue band.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
4kV
VRWM
crest working reverse voltage
4kV
IF(AV)
average forward current
50
mA
IRSM
non-repetitive peak reverse current
t = 100
µs triangular pulse;
Tj max prior to surge
50
mA
Tstg
storage temperature
−65
175
°C
Tj
junction temperature
continuous
175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VF
forward voltage
IF =10mA
5
7
V
V(BR)R
reverse avalanche breakdown
voltage
IR = 100 µA
5.5
7.5
kV
IR
reverse current
VR =VRWMmax; Tj = 175 °C
30
µA
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
Tamb =Tleads; lead length = 10 mm
100
K/W


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