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BYX135GL Folha de dados(PDF) 2 Page - NXP Semiconductors |
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BYX135GL Folha de dados(HTML) 2 Page - NXP Semiconductors |
2 / 4 page 2000 Jan 13 2 Philips Semiconductors Product specification High-voltage car ignition diode BYX135GL FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability. APPLICATIONS • Car ignition systems • Automotive applications with extreme temperature requirements. DESCRIPTION Rugged glass package, using a high temperature alloyed construction. The SOD119AD is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. handbook, halfpage ka MAM420 Fig.1 Simplified outline (SOD119AD) and symbol. Cathode indicated by a green band. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). CHARACTERISTICS Tj =25 °C; unless otherwise specified. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 5kV VRWM crest working reverse voltage − 5kV IF(AV) average forward current − 50 mA IRSM non-repetitive peak reverse current t = 100 µs triangular pulse; Tj max prior to surge − 50 mA Tstg storage temperature −65 +200 °C Tj junction temperature continuous − 175 °C maximum 30 minutes − 200 °C SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage IF = 10 mA 6.25 8.75 V V(BR)R reverse avalanche breakdown voltage IR = 100 µA 7.0 9.5 kV IR reverse current VR =VRWMmax; Tj = 175 °C − 30 µA SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient Tamb =Tleads; lead length = 10 mm 90 K/W |
Nº de peça semelhante - BYX135GL |
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Descrição semelhante - BYX135GL |
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