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BYX90G Folha de dados(PDF) 2 Page - NXP Semiconductors

Nome de Peças BYX90G
Descrição Electrónicos  High-voltage soft-recovery controlled avalanche rectifier
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYX90G Folha de dados(HTML) 2 Page - NXP Semiconductors

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1996 Sep 26
2
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifier
BYX90G
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Soft-recovery switching
characteristics
• Guaranteed avalanche energy
absorption capability.
APPLICATIONS
• High-voltage rectification at high
frequencies
• Sub-component for very high
voltage rectifiers, for example, in
X-ray and radar equipment.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
The package is designed to be used
in an insulating medium such as
resin, oil or SF6 gas.
Fig.1 Simplified outline (SOD83A) and symbol.
The cathode is marked by a black band on the body.
handbook, halfpage
MSA480
a
k

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
7.5
kV
VRWM
crest working reverse voltage
6kV
IF(AV)
average forward current
averaged over any 20 ms period;
Toil =45 °C; see Fig.2;
see also Fig.3
550
mA
IFRM
repetitive peak forward current
5A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave; Tj =Tj max
prior to surge; VR =VRWMmax;
see Fig.4
20
A
PRSM
non-repetitive peak reverse power
dissipation
t=10
µs; triangular pulse;
Tj =Tj max prior to surge
5kW
Tstg
storage temperature
−65
+165
°C
Tj
junction temperature
−65
+165
°C


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