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BYX90G Folha de dados(PDF) 3 Page - NXP Semiconductors |
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BYX90G Folha de dados(HTML) 3 Page - NXP Semiconductors |
3 / 9 page 1996 Sep 26 3 Philips Semiconductors Product specification High-voltage soft-recovery controlled avalanche rectifier BYX90G ELECTRICAL CHARACTERISTICS Tj =25 °C; unless otherwise specified. THERMAL CHARACTERISTICS Note 1. For more information please refer to the “General Part of associated Handbook”. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 2 A; see Fig.5 −− 14.5 V V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA 8 −− kV IR reverse current VR =VRWMmax; Tj =Tj max −− 50 µA trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.7 −− 350 ns SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-o thermal resistance from junction to oil note 1; see also Fig.6 20 K/W |
Nº de peça semelhante - BYX90G |
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Descrição semelhante - BYX90G |
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