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FSB50450T Folha de dados(PDF) 3 Page - Fairchild Semiconductor |
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FSB50450T Folha de dados(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page 3 www.fairchildsemi.com FSB50450T Rev. A Electrical Characteristics (TJ = 25°C, VCC=VBS=15V Unless Otherwise Specified) Inverter Part (Each FRFET Unless Otherwise Specified) Control Part (Each HVIC Unless Otherwise Specified) Note: 1. For the measurement point of case temperature TC, please refer to Figure 3 in page 4. 2. BVDSS is the absolute maximum voltage rating between drain and source terminal of each FRFET inside SPM. VPN should be sufficiently less than this value considering the effect of the stray inductance so that VDS should not exceed BVDSS in any case. 3. tON and tOFF include the propagation delay time of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the field applcations due to the effect of different printed circuit boards and wirings. Please see Figure 4 for the switching time definition with the switching test circuit of Figure 5. 4. The peak current and voltage of each FRFET during the switching operation should be included in the safe operating area (SOA). Please see Figure 5 for the RBSOA test cir- cuit that is same as the switching test circuit. Symbol Parameter Conditions Min Typ Max Units BVDSS Drain-Source Breakdown Voltage VIN= 0V, ID = 250µA (Note 2) 500 - - V ∆ BVDSS/ ∆ TJ Breakdown Voltage Tem- perature Coefficient ID = 250µA, Referenced to 25°C - 0.53 - V IDSS Zero Gate Voltage Drain Current VIN= 0V, VDS = 500V - - 250 µ A RDS(on) Static Drain-Source On-Resistance VCC = VBS = 15V, VIN = 5V, ID = 1.0A - 1.9 2.4 Ω VSD Drain-Source Diode Forward Voltage VCC = VBS = 15V, VIN = 0V, ID = -1.0A - - 1.2 V tON Switching Times VPN = 300V, VCC = VBS = 15V, ID = 1.0A VIN = 0V ↔ 5V Inductive load L=3mH High- and low-side FRFET switching (Note 3) - 1152 - ns tOFF - 600 - ns trr - 185 - ns EON -85 - µ J EOFF -11- µ J RBSOA Reverse-bias Safe Oper- ating Area VPN = 400V, VCC = VBS = 15V, ID = IDP, REH = 0Ω VDS=BVDSS, TJ = 125°C High- and low-side FRFET switching (Note 4) Full Square Symbol Parameter Conditions Min Typ Max Units IQCC Quiescent VCC Current VCC=15V, VIN=0V Applied between VCC and COM - - 160 µ A IQBS Quiescent VBS Current VBS=15V, VIN=0V Applied between VB(U)-U, VB(V)-V, VB(W)-W - - 100 µ A UVCCD Low-side Undervoltage Protection (Figure 6) VCC Undervoltage Protection Detection Level 7.4 8.0 9.4 V UVCCR VCC Undervoltage Protection Reset Level 8.0 8.9 9.8 V UVBSD High-side Undervoltage Protection (Figure 7) VBS Undervoltage Protection Detection Level 7.4 8.0 9.4 V UVBSR VBS Undervoltage Protection Reset Level 8.0 8.9 9.8 V VIH ON Threshold Voltage Logic High Level Applied between IN and COM 3.0 - - V VIL OFF Threshold Voltage Logic Low Level - - 0.8 V IIH Input Bias Current VIN = 5V Applied between IN and COM -10 20 µ A IIL VIN = 0V - - 2 µ A |
Nº de peça semelhante - FSB50450T |
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Descrição semelhante - FSB50450T |
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