IRFZ44N datasheet(3/8 Pages) PHILIPS

Nome de Peças	IRFZ44N

Descrição Electrónicos	N-channel enhancement mode TrenchMOS transistor

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Philips Semiconductors

Product specification

N-channel enhancement mode

IRFZ44N

TrenchMOS

TM transistor

AVALANCHE LIMITING VALUE

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

W

DSS

Drain-source non-repetitive

I

D = 45 A; VDD ≤ 25 V;

-

110

mJ

unclamped inductive turn-off

V

GS = 10 V; RGS = 50 Ω; Tmb = 25 ˚C

energy

Fig.1. Normalised power dissipation.

PD% = 100

⋅P

D/PD 25 ˚C = f(Tmb)

Fig.2. Normalised continuous drain current.

ID% = 100

⋅I

D/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V

Fig.3. Safe operating area. T

mb = 25 ˚C

I

D & IDM = f(VDS); IDM single pulse; parameter tp

Fig.4. Transient thermal impedance.

Z

th j-mb = f(t); parameter D = tp/T

0

20

40

60

80

100

120

140

160

180

Tmb / C

PD%

Normalised Power Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

1

10

100

1

10

100

1000

ID/A

VDS/V

RDS(ON) =VDS/ID

DC

tp =

1 us

10us

100 us

1 ms

10ms

100ms

0

20

40

60

80

100

120

140

160

180

Tmb / C

ID%

Normalised Current Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

1E-06

0.0001

0.01

1

100

0.001

0.01

0.1

1

10

D =

tp

T

P

t

D

0.5

0.2

0.1

0.05

0.02

0

Zth/(K/W)

t/s

February 1999

3

Rev 1.000

Nº de peça semelhante - IRFZ44N

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