1998 Mar 24

4

Philips Semiconductors

Product specification

Magnetic field sensor

KMZ10A

THERMAL CHARACTERISTICS

CHARACTERISTICS

Notes

1. Before first operation or after operation outside the SOAR (Fig.4) the sensor has to be reset by application of an

decrease of sensitivity.

3.

.

SYMBOL

PARAMETER

VALUE

UNIT

thermal resistance from junction to ambient

180

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

magnetic field strength

note 2

−0.5

−+0.5

kA/m

S

sensitivity

notes 2 and 3

13

−

19

temperature coefficient of

output voltage

−−0.4

−

%/K

−−0.15

−

%/K

bridge resistance

0.8

−

1.6

k

Ω

temperature coefficient of

bridge resistance

−

0.25

−

%/K

offset voltage

−1.5

−

+1.5

mV/V

offset voltage drift

−6

−+6

FL

linearity deviation of output

voltage

−−

0.8

%

⋅FS

−−

2.5

%

⋅FS

−−

4.0

%

⋅FS

FH

hysteresis of output voltage

−−

0.5

%

⋅FS

f

operating frequency

0

−

1

MHz

mV V

⁄

kA m

⁄

-----------------

µVV

⁄

K

---------------

S

V

0.4 kA m

⁄

=

()

V

0

=

()

–

0.4

V

CC

×

----------------------------------------------------------------------------------------------------------------

=