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AM29BDD160GB40CPBI Folha de dados(PDF) 3 Page - Advanced Micro Devices |
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AM29BDD160GB40CPBI Folha de dados(HTML) 3 Page - Advanced Micro Devices |
3 / 79 page DATA SHEET Publication# 24960 Rev: D Amendment: 5 Issue Date: June 7, 2006 Refer to AMD’s Website (www.amd.com) for the latest information. Am29BDD160G 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in other bank. (–40°C to 85°C, 56 MHz and below only) — Zero latency between read and write operations — Two bank architecture: 75%/25% User-Defined x16 or x32 Data Bus Dual Boot Block — Top and bottom boot in the same device Flexible sector architecture — Eight 8 Kbytes, thirty 64 Kbytes, and eight 8 Kbytes sectors Manufactured on 0.17 µm process technology SecSi (Secured Silicon) Sector (256 Bytes) — Current version of device has 64 Kbytes; future versions will have 256 bytes — Factory locked and identifiable: 16 bytes for secure, random factory Electronic Serial Number; remainder may be customer data programmed by AMD — Customer lockable: Can be read, programmed, or erased just like other sectors. Once locked, data cannot be changed Programmable Burst interface — Interface to any high performance processor — Modes of Burst Read Operation: Linear Burst: 4 double words (x32), 8 words (x16) and double words (x32), and 32 words (x16) with wrap around Single power supply operation — Optimized for 2.5 to 2.75 volt read, erase, and program operations Compatible with JEDEC standards (JC42.4) — Pinout and software compatible with single-power-supply flash standard PERFORMANCE CHARACTERISTICS High performance read access — Initial/random access time as fast as 54 ns — Burst access time as fast as 9 ns for ball grid array package Ultra low power consumption — Burst Mode Read: 90 mA @ 66 MHz max — Program/Erase: 50 mA max — Standby mode: CMOS: 60 µA max Minimum 1 million write cycles guaranteed per sector 20 year data retention at 125°C VersatileI/O TM control — Device generates data output voltages and tolerates data input voltages as determined by the voltage on the V IO pin — 1.65 V to 2.75 V compatible I/O signals SOFTWARE FEATURES Persistent Sector Protection — A command sector protection method to lock combinations of individual sectors and sector groups to prevent program or erase operations within that sector (requires only V CC levels) Password Sector Protection — A sophisticated sector protection method to lock combinations of individual sectors and sector groups to prevent program or erase operations within that sector using a user-definable 64-bit password Supports Common Flash Interface (CFI) Unlock Bypass Program Command — Reduces overall programming time when issuing multiple program command sequences Data# Polling and toggle bits — Provides a software method of detecting program or erase operation completion HARDWARE FEATURES Program Suspend/Resume & Erase Suspend/Resume — Suspends program or erase operations to allow reading, programming, or erasing in same bank Hardware Reset (RESET#), Ready/Busy# (RY/BY#), and Write Protect (WP#) inputs ACC input — Accelerates programming time for higher throughput during system production Package options — 80-pin PQFP — 80-ball Fortified BGA NOTE: For new designs, S29CD016G supersedes Am29BDD160G and is the factory-recommended migration path for this device. Please refer to the S29CD016G datasheet for specifica- tions and ordering information. |
Nº de peça semelhante - AM29BDD160GB40CPBI |
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Descrição semelhante - AM29BDD160GB40CPBI |
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