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MMBTH24 Folha de dados(PDF) 1 Page - Diodes Incorporated

Nome de Peças MMBTH24
Descrição Electrónicos  NPN SURFACE MOUNT VHF/UHF TRANSISTOR
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Fabricante Electrônico  DIODES [Diodes Incorporated]
Página de início  http://www.diodes.com
Logo DIODES - Diodes Incorporated

MMBTH24 Folha de dados(HTML) 1 Page - Diodes Incorporated

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MMBTH24
NPN SURFACE MOUNT VHF/UHF TRANSISTOR
Features
Designed for VHF/UHF Amplifier Applications and High
Output VHF Oscillators
High Current Gain Bandwidth Product
Ideal for Mixer and RF Amplifier Applications with
collector currents in the 100
μA - 30 mA Range
Lead Free/RoHS Compliant (Note 3)
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
α
0
°
8
°
All Dimensions in mm
C
B
E
Maximum Ratings @T
A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
4.0
V
Collector Current - Continuous (Note 1)
IC
50
mA
Power Dissipation (Note 1)
Pd
300
mW
Thermal Resistance, Junction to Ambient (Note 1)
RθJA
417
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
°C
Electrical Characteristics @T
A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
V
IC = 1mA, IB = 0
B
Collector-Base Breakdown Voltage
V(BR)CBO
40
V
IC = 100μA, IE = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
4.0
V
IE = 10μA, IC = 0
Collector Cutoff Current
ICBO
100
nA
VCB = 30V, IE = 0
Emitter Cutoff Current
IEBO
100
nA
VEB = 2V, IC = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
30
IC = 8mA, VCE = 10.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.5
V
IC = 4mA, IB = 400μA
B
Base-Emitter On Voltage
VBE(SAT)
0.95
V
IC = 4mA, VCE = 10.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
400
MHz
VCE = 10V, f = 100MHz, IC = 8mA
Collector-Base Capacitance
CCB
0.7
pF
VCB = 10V, f = 1.0MHz, IE = 0
Collector-Base Feedback Capacitance
CRB
0.65
pF
VCB = 10V, f = 1.0MHz, IE = 0
Collector-Base Time Constant
Rb’Cc
9
ps
IC = 4mA, VCB = 10V, f = 31.8MHz
Notes:
1.
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout, as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2.
Short duration pulse test used to minimize self-heating effect.
3.
No purposefully added lead.
DS31034 Rev. 12 - 2
1 of 3
www.diodes.com
MMBTH24
© Diodes Incorporated
SPICE MODEL: MMBTH24


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