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IRF7460PBF Datasheet(Folha de dados) 1 Page - International Rectifier

Nome de Peças. IRF7460PBF
descrição  HEXFET Power MOSFET
Download  8 Pages
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Fbricantes  IRF [International Rectifier]
Página de início  http://www.irf.com
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www.irf.com
1
10/12/04
IRF7460PbF
SMPS MOSFET
HEXFET® Power MOSFET
Notes
 through … are on page 8
SO-8
Symbol
Parameter
Typ.
Max.
Units
RθJL
Junction-to-Drain Lead
–––
20
RθJA
Junction-to-Ambient
…
–––
50
°C/W
Thermal Resistance
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-to-Source Voltage
± 20
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
12
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
10
A
IDM
Pulsed Drain Current

100
PD @TA = 25°C
Maximum Power Dissipation
ƒ
2.5
W
PD @TA = 70°C
Maximum Power Dissipation
ƒ
1.6
W
Linear Derating Factor
0.02
mW/°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
VDSS
RDS(on) max(mW)
ID
20V
10@VGS = 10V
12A
PD - 95308
Applications
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free




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