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IRFPS38N60LPBF Folha de dados(PDF) 1 Page - International Rectifier |
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IRFPS38N60LPBF Folha de dados(HTML) 1 Page - International Rectifier |
1 / 9 page IRFPS38N60LPbF PD - 95701 SMPS MOSFET HEXFET® Power MOSFET Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications. • Lower Gate charge results in simpler drive requirements. • Enhanced dv/dt capabilities offer improved ruggedness. • Higher Gate voltage threshold offers improved noise immunity . 9/10/04 www.irf.com 1 S D G Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications • Lead-Free SUPER TO-247AC Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 38 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 24 A IDM Pulsed Drain Current 150 PD @TC = 25°C Power Dissipation 540 W Linear Derating Factor 4.3 W/°C VGS Gate-to-Source Voltage ±30 V dv/dt Peak Diode Recovery dv/dt d 13 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 1.1(10) N•m (lbf•in) Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 38 MOSFET symbol (Body Diode) A showing the ISM Pulsed Source Current ––– ––– 150 integral reverse (Body Diode) Ã c p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 38A, VGS = 0V f trr Reverse Recovery Time ––– 170 250 ns TJ = 25°C, IF = 38A ––– 420 630 TJ = 125°C, di/dt = 100A/µs f Qrr Reverse Recovery Charge ––– 830 1240 nC TJ = 25°C, IS = 38A, VGS = 0V f ––– 2600 3900 TJ = 125°C, di/dt = 100A/µs f IRRM Reverse Recovery Current ––– 9.1 14 A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VDSS RDS(on) typ. Trr typ. ID 600V 120m Ω 170ns 38A |
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