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FDD6632 Folha de dados(PDF) 1 Page - Fairchild Semiconductor |
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FDD6632 Folha de dados(HTML) 1 Page - Fairchild Semiconductor |
1 / 11 page ©2004 Fairchild Semiconductor Corporation October 2004 FDD6632 Rev. B1 FDD6632 N-Channel Logic Level UltraFET® Trench Power MOSFET 30V, 9A, 70m Ω General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Formerly developmental type 83317 Applications • DC/DC converters Features • Fast switching •rDS(ON) = 0.058Ω (Typ), VGS = 10V, ID = 9A •rDS(ON) = 0.090Ω (Typ), VGS = 4.5V, ID = 6A •Qg(TOT) (Typ) = 2.6nC, VGS = 5V •Qgd (Typ) = 0.8nC •CISS (Typ) = 255pF MOSFET Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V ID Drain Current 9A Continuous (TC = 25 oC, V GS = 10V) Continuous (TC = 100 oC, V GS = 4.5V) 6 A Continuous (TC = 25 oC, V GS = 10V, R θJA = 52 oC/W) 4 A Pulsed Figure 4 A PD Power dissipation 15 W Derate above 25oC0.1 W/oC TJ, TSTG Operating and Storage Temperature -55 to 175 oC RθJC Thermal Resistance Junction to Case TO-252 10 oC/W RθJA Thermal Resistance Junction to Ambient TO-252 100 oC/W RθJA Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 52 oC/W Device Marking Device Package Reel Size Tape Width Quantity FDD6632 FDD6632 TO-252AA 330mm 16mm 2500 units D G S G S D TO-252 D-PAK (TO-252) |
Nº de peça semelhante - FDD6632_04 |
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Descrição semelhante - FDD6632_04 |
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