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BYY57-200 Folha de dados(PDF) 2 Page - Zetex Semiconductors

Nome de Peças BYY57-200
Descrição Electrónicos  35A Silicon Power Rectifier Diode
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Fabricante Electrônico  ZETEX [Zetex Semiconductors]
Página de início  http://www.diodes.com/
Logo ZETEX - Zetex Semiconductors

BYY57-200 Folha de dados(HTML) 2 Page - Zetex Semiconductors

  BYY57-200 Datasheet HTML 1Page - Zetex Semiconductors BYY57-200 Datasheet HTML 2Page - Zetex Semiconductors BYY57-200 Datasheet HTML 3Page - Zetex Semiconductors BYY57-200 Datasheet HTML 4Page - Zetex Semiconductors BYY57-200 Datasheet HTML 5Page - Zetex Semiconductors  
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BYY57 / BYY58
Absolute maximum ratings
(at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Unit
Test condition
BYY57-75
BYY58-75
75
BYY57-100
BYY58-100
100
BYY57-150
BYY58-150
150
BYY57-200
BYY58-200
200
BYY57-300
BYY58-300
300
BYY57-400
BYY58-400
400
BYY57-500
BYY58-500
500
BYY57-600
BYY58-600
600
BYY57-700
BYY58-700
700
BYY57-800
BYY58-800
800
BYY57-900
BYY58-900
900
BYY57-1000
BYY58-1000
1000
BYY57-1100
BYY58-1100
1100
BYY57-1200
BYY58-1200
1200
BYY57-1300
BYY58-1300
1300
BYY57-1400
BYY58-1400
1400
Repetitive
peak
reverse
voltage
BYY57-1500
BYY58-1500
VRRM
1500
V
Tc = 150°C
Forward current, arithmetic value
IFAV
35
A
600
half-sine wave,
≤ 10 ms
Surge forward current
IFSM
500
A
TJ = 175°C half-sine
wave,
≤ 10 ms
1800
half-sine wave,
≤ 10 ms
Maximum rated value
∫i²dt
1250
A²s
TJ = 175°C half-sine
wave,
≤ 10 ms
Repetitive peak forward current
IFRM=π*IFAV
110
A
f = >15 Hz
Effective forward current
IFRMS
55
A
Junction temperature
TJmax
200
°C
Storage temperature range
Tstg
- 50 to + 175
°C
Issue 4 – September 2006
2
www.zetex.com
© Zetex Semiconductors plc 2006


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