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BCP54-10 Folha de dados(PDF) 9 Page - NXP Semiconductors

Nome de Peças BCP54-10
Descrição Electrónicos  45 V, 1 A NPN medium power transistors
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Fabricante Electrônico  NXP [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo NXP - NXP Semiconductors

BCP54-10 Folha de dados(HTML) 9 Page - NXP Semiconductors

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BC635_BCP54_BCX54_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 4 June 2007
9 of 15
NXP Semiconductors
BC635; BCP54; BCX54
45 V, 1 A NPN medium power transistors
7.
Characteristics
[1]
Pulse test: tp ≤ 300 µs; δ = 0.02.
FR4 PCB, mounting pad for collector 6 cm2
Fig 9.
Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
006aaa816
10
1
102
103
Zth(j-a)
(K/W)
10−1
10−5
10
10−2
10−4
102
10−1
tp (s)
10−3
103
1
duty cycle =
0.01
0
0.02
0.05
0.1
0.2
0.33
0.5
0.75
1.0
Table 8.
Characteristics
Tamb =25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB =30V; IE = 0 A
-
-
100
nA
VCB =30V; IE =0A;
Tj = 150 °C
--10
µA
IEBO
emitter-base cut-off
current
VEB =5V; IC = 0 A
-
-
100
nA
hFE
DC current gain
VCE =2V
IC = 5 mA
63
-
-
IC = 150 mA
63
-
250
IC = 500 mA
[1] 40
-
-
DC current gain
VCE =2V
hFE selection -10
IC = 150 mA
63
-
160
hFE selection -16
IC = 150 mA
100
-
250
VCEsat
collector-emitter
saturation voltage
IC = 500 mA; IB =50mA
[1] -
-
500
mV
VBE
base-emitter voltage
VCE =2V; IC = 500 mA
[1] --1
V
Cc
collector capacitance
VCB =10V; IE =ie =0A;
f=1MHz
-6
-pF
fT
transition frequency
VCE =5V; IC =50mA;
f = 100 MHz
100
180
-
MHz


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