PHN70308 datasheet(6/10 Pages) PHILIPS

Nome de Peças	PHN70308

Descrição Electrónicos	N-channel enhancement mode TrenchMOS transistor array

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Fabricante Electrônico	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

N-channel enhancement mode

PHN70308

TrenchMOS transistor array

Fig.11. Typical output characteristics (isolation FET)

T

j = 25 ˚C; ID = f(VDS); parameter VGS

Fig.12. Typical on-state resistance (spindle FET)

T

j = 25 ˚C; RDS(ON) = f(ID); parameter VGS

Fig.13. Typical on-state resistance (isolation FET)

T

j = 25 ˚C; RDS(ON) = f(ID); parameter VGS

Fig.14. Typical transfer characteristics (spindle FET)

I

D = f(VGS)

Fig.15. Typical transfer characteristics

(isolation FET); I

D = f(VGS)

Fig.16. Typical transconductance (spindle FET)

T

j = 25 ˚C; gfs = f(ID)

0

1

2

3

4

5

6

7

8

9

10

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

Drain-Source Voltage, VDS (V)

Drain Current, ID (A)

2.6 V

2.8 V

Tj = 25 C

VGS = 4.5 V

3 V

3.2 V

10 V

3.6 V

3.4 V

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

Gate-source voltage, VGS (V)

Drain current, ID (A)

VDS > ID X RDS(ON)

Tj = 25 C

150 C

0

0.1

0.2

0.3

0.4

0.5

01

234

56

78

Drain Current, ID (A)

Drain-Source On Resistance, RDS(on) (Ohms)

VGS =4.5 V

10V

Tj = 25 C

3.4V

3.6 V

3.2 V

2.8 V

3 V

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

Gate-source voltage, VGS (V)

Drain current, ID (A)

VDS > ID X RDS(ON)

Tj = 25 C

150 C

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

0.18

0.2

0123456789

10

Drain Current, ID (A)

Drain-Source On Resistance, RDS(on) (Ohms)

VGS =4.5 V

10V

Tj = 25 C

3.4V

3.6 V

3.2 V

3 V

0

1

2

3

4

5

6

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

Drain current, ID (A)

Transconductance, gfs (S)

Tj = 25 C

150 C

VDS > ID X RDS(ON)

May 1999

6

Rev 1.000

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