2.0 ± 0.2

0.65 TYP

4

2

3

1

0.5

TYP

2.0±0.2

1.9 ± 0.2

0.125 ± 0.05

1.6

0.4 MAX

4.0 ± 0.2

1.5 MAX

K

NEC's SUPER LOW

NOISE HJ FET NE3210S01

DESCRIPTION

NEC's NE3210S01 is a pseudomorphic Hetero-Junction FET

thatusesthejunction betweenSi-dopedAIGaAsandundoped

InGaAs to create very high mobility electrons. The device

features mushroom shaped TiAl gates for decreased gate

resistance and improved power handling. Its excellent low

noise figure and high associated gain make it suitable for DBS

and commercial systems. The NE 3210S01 is housed in a low

cost plastic package which is available in tape and reel.

NEC's stringent quality assurance and test procedures assure

the highest reliability and performance.

FEATURES

• SUPER LOW NOISE FIGURE:

0.35 dB TYP at f = 12 GHz

• HIGH ASSOCIATED GAIN:

13.5 dB TYP at f = 12 GHz

PART NUMBER

NE3210S01

PACKAGE OUTLINE

S01

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

dB

12

13.5

NF

dB

0.35

0.45

mS

40

55

mA

15

40

70

V

-0.2

-0.7

-2.0

uA

0.5

10

PACKAGE OUTLINE SO1

1. Source

2. Drain

3. Source

4. Gate

Note:

1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually

measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production

line

as a "go-no-go" screening tuned for the "generic" type but not each specimen.

California Eastern Laboratories