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NE32484A-T1 Folha de dados(PDF) 1 Page - NEC |
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NE32484A-T1 Folha de dados(HTML) 1 Page - NEC |
1 / 5 page PART NUMBER NE32484A PACKAGE OUTLINE 84AS SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX NFOPT1 Noise Figure, VDS = 2.0 V, ID = 10 mA, f = 12 GHz dB 0.6 0.7 GA1 Associated Gain, VDS = 2.0 V, ID = 10 mA, f = 12 GHz dB 10.0 11.0 P1dB Output Power at 1 dB Gain Compression Point, f = 12 GHz VDS = 2.0 V, IDS = 10 mA dBm 8.5 VDS = 2.0 V, IDS = 20 mA dBm 11.0 G1dB Gain at P1dB, f = 12 GHz VDS = 2.0 V, IDS = 10 mA dB 10.0 VDS = 2.0 V, IDS = 20 mA dB 10.5 IDSS Saturated Drain Current, VDS = 2.0 V, VGS = 0 V mA 15 40 70 VP Pinch-off Voltage, VDS = 2.0 V, IDS = 0.1 mA V -2.0 -0.8 -0.2 gm Transconductance, VDS = 2.0 V, ID = 10 mA mS 45 60 IGSO Gate to Source Leakage Current, VGS = -3.0 V, ID = 0 mA µA 0.5 10.0 RTH (CH-A) Thermal Resistance (Channel to Ambient) °C/W 750 RTH (CH-C) Thermal Resistance (Channel to Case) °C/W 350 ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A FEATURES • VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz •LG = 0.25 µm, WG = 200 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not for each specimen. Frequency, f (GHz) ELECTRICAL CHARACTERISTICS (TA = 25°C) DESCRIPTION The NE32484A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume consumer and industrial applications. NEC's stringent quality assurance and test procedures as- sure the highest reliability and performance. 1 10 20 30 1.4 1.2 1 0.8 0.6 0.4 0.2 0 24 21 18 15 12 9 6 3 GA NF California Eastern Laboratories |
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Descrição semelhante - NE32484A-T1 |
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