SB10150DC

1 of 4

© 2006 Won-Top Electronics

Pb

SB10150DC

10A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

Features

!

Schottky Barrier Chip

C

!

Guard Ring Die Construction for

A

J

Transient Protection

!

Low Forward Voltage Drop

!

Low Power Loss, High Efficiency

B

!

High Surge Current Capability

D

E

!

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

G

Protection Applications

H

K

P

P

Mechanical Data

!

Case: D

!

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

!

Polarity: See Diagram

PIN 1 -

+

!

Weight: 1.7 grams (approx.)

PIN 3 -

Case, PIN 2

!

Mounting Position: Any

!

Marking: Type Number

!

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Symbol

SB10150DC

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

150

V

RMS Reverse Voltage

105

V

Average Rectified Output Current

10

A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed

on rated load (JEDEC Method)

150

A

Forward Voltage

0.92

V

Peak Reverse Current

At Rated DC Blocking Voltage

0.5

50

mA

Typical Junction Capacitance (Note 1)

600

pF

Typical Thermal Resistance (Note 2)

3.0

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal resistance junction to case mounted on heatsink.

WTE

POWER SEMICONDUCTORS

Dim

Min

Max

A

9.80

10.40

B

9.60

10.60

C

4.40

4.80

D

8.50

9.10

E

2.80

—

G

1.00

1.40

H

—0.90

J

1.20

1.40

K

0.30

0.70

P

2.35

2.75

All Dimensions in mm

PIN 1

2

3