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ES1C Folha de dados(PDF) 3 Page - NXP Semiconductors

Nome de Peças ES1C
Descrição Electrónicos  Ultra fast low-loss controlled avalanche rectifiers
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

ES1C Folha de dados(HTML) 3 Page - NXP Semiconductors

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2000 Feb 14
3
Philips Semiconductors
Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers
ES1 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm. For more
information please refer to the
‘General Part of associated Handbook’.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VF
forward voltage
IF = 1 A; see Fig.4
1.1
V
IR
reverse current
VR =VRRMmax; see Fig.5
5
µA
VR =VRRMmax; Tj = 165 °C; see Fig.5
100
µA
trr
reverse recovery time
when switched from IF = 0.5 A to IR =1A;
measured at IR = 0.25 A; see Fig.9
25
ns
Cd
diode capacitance
VR = 4 V; f = 1 MHz; see Fig.6
19
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point; see Fig.7
27
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W
note 2
150
K/W


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