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2SJ670 Folha de dados(PDF) 1 Page - Sanyo Semicon Device |
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2SJ670 Folha de dados(HTML) 1 Page - Sanyo Semicon Device |
1 / 4 page 2SJ670 No.8354-1/4 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : EN8354A Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. 82506 MS IM TC-00000122 / 62005PA MS IM TB-00001479 SANYO Semiconductors DATA SHEET 2SJ670 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --100 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID --1.5 A Drain Current (Pulse) IDP PW ≤10µs, duty cycle≤1% --6 A Allowable Power Dissipation PD Mounted on a ceramic board (600mm2!0.8mm) 1.5 W Tc=25 °C 3.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --100 V Zero-Gate Voltage Drain Current IDSS VDS=--100V, VGS=0V --1 µA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 µA Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V Forward Transfer Admittance yfs VDS=--10V, ID=--0.8A 1.3 2.3 S RDS(on)1 ID=--0.8A, VGS=--10V 410 535 m Ω Static Drain-to-Source On-State Resistance RDS(on)2 ID=--0.8A, VGS=--4V 530 745 m Ω Input Capacitance Ciss VDS=--20V, f=1MHz 535 pF Output Capacitance Coss VDS=--20V, f=1MHz 43 pF Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 31 pF Turn-ON Delay Time td(on) See specified Test Circuit. 9 ns Rise Time tr See specified Test Circuit. 4.5 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 62 ns Fall Time tf See specified Test Circuit. 34 ns Marking : NA Continued on next page. |
Nº de peça semelhante - 2SJ670 |
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Descrição semelhante - 2SJ670 |
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