TIPL760C datasheet(2/7 Pages) POINN

Nome de Peças	TIPL760C

Descrição Electrónicos	NPN SILICON POWER TRANSISTORS

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Fabricante Electrônico	POINN [Power Innovations Ltd]

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TIPL760B, TIPL760C

NPN SILICON POWER TRANSISTORS

2

MAY 1989 - REVISED MARCH 1997

PRODUCT

INFORMATION

NOTES: 2. Inductive loop switching measurement.

3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VCEO(sus)

Collector-emitter

sustaining voltage

IC =

10 mA

L = 25 mH

(see Note 2)

TIPL760B

TIPL760C

500

550

V

ICES

Collector-emitter

cut-off current

VCE = 1100 V

VCE = 1200 V

VCE = 1100 V

VCE = 1200 V

VBE = 0

TC = 100°C

TIPL760B

TIPL760C

TIPL760B

TIPL760C

50

200

µA

ICEO

Collector cut-off

current

VCE = 500 V

VCE = 550 V

IB = 0

TIPL760B

TIPL760C

50

µA

IEBO

Emitter cut-off

current

VEB =

10 V

IC = 0

1

mA

hFE

Forward current

transfer ratio

VCE =

5 V

IC = 0.5 A

(see Notes 3 and 4)

20

60

VCE(sat)

Collector-emitter

saturation voltage

IB =

0.4 A

IB =

0.6 A

IB =

0.6 A

IC =

2 A

IC =

3 A

IC =

3 A

(see Notes 3 and 4)

TC = 100°C

1.0

2.5

5.0

V

VBE(sat)

Base-emitter

saturation voltage

IB =

0.4 A

IB =

0.6 A

IB =

0.6 A

IC =

2 A

IC =

3 A

IC =

3 A

(see Notes 3 and 4)

TC = 100°C

1.2

1.4

1.3

V

ft

Current gain

bandwidth product

VCE =

10 V

IC = 0.5 A

f =

1 MHz

12

MHz

Cob

Output capacitance

VCB =

20 V

IE = 0

f = 0.1 MHz

110

pF

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

RθJC

Junction to case thermal resistance

1.56

°C/W

inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS †

MIN

TYP

MAX

UNIT

tsv

Voltage storage time

IC = 3 A

VBE(off) = -5 V

IB(on) = 0.6 A

(see Figures 1 and 2)

2.5

µs

trv

Voltage rise time

300

ns

tfi

Current fall time

250

ns

tti

Current tail time

150

ns

txo

Cross over time

400

ns

tsv

Voltage storage time

IC = 3 A

VBE(off) = -5 V

IB(on) = 0.6 A

TC = 100°C

(see Figures 1 and 2)

3

µs

trv

Voltage rise time

500

ns

tfi

Current fall time

250

ns

tti

Current tail time

150

ns

txo

Cross over time

750

ns

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