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STK003SF Folha de dados(PDF) 3 Page - AUK corp

Nome de Peças STK003SF
Descrição Electrónicos  N-channel Trench MOSFET
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Fabricante Electrônico  AUK [AUK corp]
Página de início  https:www.auk.co.kr
Logo AUK - AUK corp

STK003SF Folha de dados(HTML) 3 Page - AUK corp

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KSD-T5C043-000
3
N-CH Electrical Characteristics
(Ta=25
°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Drain-source breakdown voltage
BVDSS
ID=250μA, VGS=0
30
-
-
V
Gate threshold voltage
VGS(th)
ID=250μA, VDS=VGS
0.6
-
1.2
V
Drain-source cut-off current
IDSS
VDS=20V, VGS=0V
-
-
1
μA
Gate leakage current
IGSS
VDS=0V, VGS=±12V
-
-
±10
μA
VGS=4.5V, ID=1.8A
-
27
40
Drain-source on-resistance
RDS(ON)
VGS=2.5V, ID=1.8A
-
39
78
Forward transfer conductance
gfs
VDS=5V, ID=3.6A
-
11.8
-
S
Input capacitance
Ciss
-
373
-
Output capacitance
Coss
-
68
-
Reverse transfer capacitance
Crss
VGS=0V, VDS=10V,
f=1MHz
-
45
-
pF
Turn-on delay time
td(on)
-
3.6
-
Rise time
tr
-
5.1
-
Turn-off delay time
td(off)
-
24
-
Fall time
tf
VDD=10V, ID=3.6A
RG=10Ω
③④
-
5.1
-
ns
Total gate charge
Qg
-
8.8
13
Gate-source charge
Qgs
-
0.9
1.4
Gate-drain charge
Qgd
VDD=10V, VGS=4.5V
ID=3.6A
③④
-
1.8
2.7
nC
Source-Drain Diode Ratings and Characteristics
(Ta=25
°C)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
Source current
IS
-
-
0.5
Source current (Plused)
ISM
Integral reverse diode
in the MOSFET
-
-
2.0
A
Forward voltage
VSD
VGS=0V, IS=3.6A
-
0.7
1.2
V
Reverse recovery time
trr
-
26
-
ns
Reverse recovery charge
Qrr
Is=3.6A, VGS=0V
dIS/dt=100A/us
-
120
-
uC
Note ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=1.0mH, I
AS=3.6A, VDD=15V, RG=25Ω
③ Pulse Test : Pulse Width< 300us, Duty cycle≤ 2%
④ Essentially independent of operating temperature
STK003SF


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