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IRF2204LPBF Folha de dados(PDF) 1 Page - International Rectifier

Nome de Peças IRF2204LPBF
Descrição Electrónicos  HEXFET짰 Power MOSFET ( VDSS = 40V , RDS(on) = 3.6m廓 , ID = 170A )
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF2204LPBF Folha de dados(HTML) 1 Page - International Rectifier

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Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
170
†
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
120
†
A
IDM
Pulsed Drain Current

850
PD @TC = 25°C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚
460
mJ
IAR
Avalanche Current

See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
‡
mJ
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting Torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
HEXFET® Power MOSFET
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the lastest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features to this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications
and a wide variety of other applications.
S
D
G
Absolute Maximum Ratings
VDSS = 40V
RDS(on) = 3.6mΩ
ID = 170A
†
Description
06/30/04
www.irf.com
1
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Features
Typical Applications
Electric Power Steering
14 Volts Automotive Electrical Systems
Lead-Free
AUTOMOTIVE MOSFET
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.75
RθJA
Junction-to-Ambient
–––
40
PD - 95491
IRF2204SPbF
IRF2204LPbF
D2Pak
IRF2204S
TO-262
IRF2204L
°C/W


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