Os motores de busca de Datasheet de Componentes eletrônicos |
|
BF1100 Folha de dados(PDF) 6 Page - NXP Semiconductors |
|
BF1100 Folha de dados(HTML) 6 Page - NXP Semiconductors |
6 / 15 page NXP Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R Fig.7 Output characteristics; typical values. VG2-S =4V. Tj =25 °C. handbook, halfpage 0 20 16 4 8 12 0 416 MLD159 812 I D (mA) V (V) DS 1.3 V 1.2 V 1.1 V 1.0 V 0.9 V V = 1.4 V G1 S Fig.8 Transfer characteristics; typical values. VDS = 9 to 12 V. Tj =25 °C. handbook, halfpage 0 20 16 4 8 12 0 0.4 2.0 MLD160 0.8 1.2 1.6 I D (mA) V (V) G1 S V = 4 V 2.5 V 2 V 1.5 V 1 V G2 S 3 V Fig.9 Gate 1 current as a function of gate 1 voltage; typical values. VDS = 9 to 12 V. Tj =25 °C. handbook, halfpage 01 23 250 200 150 50 0 100 MLD161 I G1 ( µA) V (V) G1 S 3 V 2.5 V 2 V 3.5 V V = 4 V G2 S Fig.10 Forward transfer admittance as a function of drain current; typical values. VDS = 9 to 12 V. Tj =25 °C. handbook, halfpage 0 40 20 30 10 0 10 20 30 MLD162 y fs (mS) I (mA) D 3 V 2.5 V 2 V V = 4 V G2 S 3.5 V Rev. 02 - 13 November 2007 6 of 15 |
Nº de peça semelhante - BF1100 |
|
Descrição semelhante - BF1100 |
|
|
Ligação URL |
Privacy Policy |
ALLDATASHEETPT.COM |
ALLDATASHEET é útil para você? [ DONATE ] |
Sobre Alldatasheet | Publicidade | Contato conosco | Privacy Policy | roca de Link | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |