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2SC5930 Folha de dados(PDF) 2 Page - Toshiba Semiconductor |
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2SC5930 Folha de dados(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SC5930 2006-11-13 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 600 V, IE = 0 ⎯ ⎯ 100 μA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ⎯ ⎯ 100 μA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IB = 0 600 ⎯ ⎯ V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 285 ⎯ ⎯ V hFE (1) VCE = 5 V, IC = 1 mA 30 ⎯ 100 DC current gain hFE (2) VCE = 5 V, IC = 0.2 A 40 ⎯ 100 Collector-emitter saturation voltage VCE (sat) IC = 0.6 A, IB = 0.075 A ⎯ ⎯ 1.0 V Base-emitter saturation voltage VBE (sat) IC = 0.6 A, IB = 0.075 A ⎯ ⎯ 1.3 V Rise time tr ⎯ ⎯ 0.5 Storage time tstg ⎯ ⎯ 3.0 Switching time Fall time tf See Figure 1. VCC ≈ 200 V, RL = 667 Ω IB1 = 20 mA, −IB2 = 50 mA ⎯ ⎯ 0.3 μs Marking Figure 1 Switching Time Test Circuit & Timing Chart IB2 IB1 20 μs Output Input IB2 IB1 VCC Duty cycle < 1% C5930 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
Nº de peça semelhante - 2SC5930 |
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Descrição semelhante - 2SC5930 |
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