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2SD1160 Folha de dados(PDF) 1 Page - Toshiba Semiconductor |
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2SD1160 Folha de dados(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SD1160 2006-11-21 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SD1160 Switching Applications Suitable for Motor Drive Applications • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V DC IC 2 Collector current Pulse ICP 4 A Diode forward surge current (t = 1 s) IFP 1 A Ta = 25°C 1 Collector power dissipation Tc = 25°C PC 10 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) COLLECTOR BASE EMITTER ≈ 800 Ω |
Nº de peça semelhante - 2SD1160 |
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Descrição semelhante - 2SD1160 |
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