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2SD1160 Folha de dados(PDF) 1 Page - Toshiba Semiconductor

Nome de Peças 2SD1160
Descrição Electrónicos  Silicon NPN Epitaxial Type (PCT Process)
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Fabricante Electrônico  TOSHIBA [Toshiba Semiconductor]
Página de início  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

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2SD1160
2006-11-21
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SD1160
Switching Applications
Suitable for Motor Drive Applications
• High DC current gain
• Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA)
• Built-in free wheel diode
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
6
V
DC
IC
2
Collector current
Pulse
ICP
4
A
Diode forward surge current (t = 1 s)
IFP
1
A
Ta = 25°C
1
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
COLLECTOR
BASE
EMITTER
≈ 800 Ω


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