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2SJ669 Folha de dados(PDF) 5 Page - Toshiba Semiconductor |
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2SJ669 Folha de dados(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page 2SJ669 2006-11-17 5 EAS – Tch Channel temperature (initia) Tch (°C) 0 25 10 30 50 40 50 75 100 125 150 20 rth − tw Pulse width tw (s) Drain −source voltage VDS (V) Safe operating area 0.1 10 100 0.1 10 100 0.001 0.01 1 1 0.001 100 μ 1 m 10 m 100 m 1 10 100 0.01 0.1 1 10 T PDM t Duty = t/T Rth (ch-a) = 104°C/W Duty = 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse ID max (Pulsed) * DC operation Ta = 25°C 1 ms * VDSS max 100 μs * *:Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. ID max (Continuous) RG = 25 Ω VDD = −25 V, L = 2.2 mH ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − ⋅ ⋅ ⋅ = VDD BVDSS BVDSS 2 I L 2 1 ΕAS Test circuit Waveform IAR BVDSS VDD VDS −15 V 0 V |
Nº de peça semelhante - 2SJ669 |
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Descrição semelhante - 2SJ669 |
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