TLP180

2007-10-01

2

Characteristic

Symbol

Rating

Unit

Forward current

±50

mA

Forward current detating (Ta≥53°C)

−0.7

mA / °C

Pulse forward current

(Note1)

±1

A

Junction temperature

125

°C

Collector

−emitter voltage

80

V

Emitter

−collector voltage

7

V

Collector current

50

mA

Power dissipation

150

mW

Power dissipation derating (Ta ≥ 25°C)

−1.5

mW / °C

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Operating temperature range

−55~100

°C

Lead soldering temperature(10s)

260

°C

Total package power dissipation

200

mW

Total package power dissipation derating (Ta ≥ 25°C)

−2.0

mW / °C

Isolation voltage (AC,1min.,R.H. ≤ 60%)

(Note 2)

3750

Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Pulse width ≤ 100μs,f=100Hz

Note 2: Device considered a two terminal device: Pins 1 and 3 shorted together and 4 and 6 shorted together.

Recommended Operating Conditions

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Supply voltage

―

5

48

V

Forward current

―

16

20

mA

Collector current

IC

―

1

10

mA

Operating temperature

−25

―

85

°C

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this

product, please confirm specified characteristics shown in this document.