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74V1G03C Folha de dados(PDF) 3 Page - STMicroelectronics |
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74V1G03C Folha de dados(HTML) 3 Page - STMicroelectronics |
3 / 7 page DC SPECIFICATIONS Symb ol Parameter T est Cond ition s Val ue Un it VCC (V) TA =25 oC -40 to 85 oC Min. Typ . Max. Min . Max. VIH High Level Input Voltage 2.0 1.5 1.5 V 3.0 to 5.5 0.7VCC 0.7VCC VIL Low Level Input Voltage 2.0 0.5 0.5 V 3.0 to 5.5 0.3VCC 0.3VCC VOL Low Level Output Voltage 2.0 IO=50 µA 0.0 0.1 0.1 V 3.0 IO=50 µA 0.0 0.1 0.1 4.5 IO=50 µA 0.0 0.1 0.1 3.0 IO=4 mA 0.36 0.44 4.5 IO=8 mA 0.36 0.44 IOZ High Impedance Output Leakage Current 5.5 VI =VIH or VIL VO =VCC or GND ±0.25 ±2.5 µA II Input Leakage Current 0 to 5.5 VI = 5.5V or GND ±0.1 ±1.0 µA ICC Quiescent Supply Current 5.5 VI =VCC or GND 2 20 µA CAPACITIVE CHARACTERISTICS Symb ol Parameter T est Cond ition s Val ue Un it TA =25 oC -40 to 85 oC Min. Typ . Max. Min . Max. CIN Input Capacitance 4 10 10 pF COUT Output Capacitance 5 pF CPD Power Dissipation Capacitance (note 1) 6pF 1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN +ICC AC ELECTRICAL CHARACTERISTICS (Input tr =tf =3 ns) Symbol Parameter T est Condi tio n Valu e Unit VCC (V) CL (p F) TA =25 oC -40 to 85 oC Min. T yp. Max. Mi n. Max. tPZL Propagation Delay Time 3.3 (*) 15 RL =1 K Ω 5.5 7.9 1.0 9.5 ns 3.3 (*) 50 RL =1 K Ω 8.0 11.4 1.0 13.0 5.0 (**) 15 RL =1 K Ω 3.7 5.5 1.0 6.5 5.0 (**) 50 RL =1 K Ω 5.2 7.5 1.0 8.5 tPLZ Propagation Delay Time 3.3 (*) 50 RL =1 K Ω 9.0 11.4 1.0 13.0 ns 5.0 (**) 50 RL =1 K Ω 6.0 7.5 1.0 8.5 (*) Voltage range is 3.3V ± 0.3V (**) Voltage range is 5V ± 0.5V 74V1G03 3/7 |
Nº de peça semelhante - 74V1G03C |
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Descrição semelhante - 74V1G03C |
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