 |
Os motores de busca de Datasheet de Componentes eletrônicos |
|
|
Os motores de busca de Datasheet de Componentes eletrônicos |
|
FDD8444L Folha de dados(PDF) 2 Page - Fairchild Semiconductor |
|
||||||||||||||||||||||||||||||
FDD8444L Folha de dados(HTML) 2 Page - Fairchild Semiconductor |
|
|
2 / 7 page  FDD8444L Rev A (W) www.fairchildsemi.com 2 MOSFET Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter Ratings Units VDSS Drain to Source Voltage 40 V VGS Gate to Source Voltage ±20 V ID Drain Current Continuous (TC < 150°C, VGS = 10V) (Note 1) 50 A Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W) 16 Pulsed See Figure 4 EAS Single Pulse Avalanche Energy (Note 2) 295 mJ PD Power Dissipation 153 W Derate above 25oC1.02 W/oC TJ, TSTG Operating and Storage Temperature -55 to +175 oC RθJC Thermal Resistance, Junction to Case 0.98 oC/W RθJA Thermal Resistance, Junction to Ambient TO-252, 1in2 copper pad area 52 oC/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8444L FDD8444L TO-252AA 13” 12mm 2500 units Electrical Characteristics T J = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 40 - - V IDSS Zero Gate Voltage Drain Current VDS = 32V, - - 1 μA VGS = 0V TJ = 150oC - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA1 1.8 3 V rDS(on) Drain to Source On Resistance ID = 50A, VGS= 10V - 3.5 5.2 m Ω ID = 50A, VGS= 5V - 3.8 6.0 ID = 50A, VGS= 4.5V - 4.0 6.5 ID = 50A, VGS= 5V, TJ = 175oC - 6.8 10.7 Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz - 5530 - pF Coss Output Capacitance - 605 - pF Crss Reverse Transfer Capacitance - 400 - pF RG Gate Resistance f = 1MHz - 1.7 - Ω Qg(TOT) Total Gate Charge at 5V VGS = 0 to 5V VDD = 20V ID = 50A Ig = 1.0mA -46 60 nC Qg(TH) Threshold Gate Charge VGS = 0 to 2V - 5.4 7 nC Qgs Gate to Source Gate Charge - 16.3 - nC Qgs2 Gate Charge Threshold to Plateau - 10.9 - nC Qgd Gate to Drain “Miller“ Charge - 21 - nC |
Nº de peça semelhante - FDD8444L |
|
Descrição semelhante - FDD8444L |
|
|
|
Ligação URL |
| Privacy Policy |
| ALLDATASHEETPT.COM |
| ALLDATASHEET é útil para você? [ DONATE ] |
Sobre Alldatasheet | Publicidade | Contato conosco | Privacy Policy | roca de Link | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Portuguese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
